| PART |
Description |
Maker |
| 2SC1729 SC1729 |
NPN EPITAXIAL PLANAR TYPE(RF power amplifiers on VHF band mobile radio)
From old datasheet system
NPN EPITAXAIL PLANAR TYPE
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| URSF05G49-5P URSF05G49-1P URSF05G49-3P |
THYRISTOR SILICON PLANAR TYPE LOW POWER SWITCHING AND CONTROL APPLICATIONS
TOSHIBA THYRISTOR SILICON PLANAR TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
| BCR6 BCR6AM |
MEDIUM POWER USE NON-INSULATED TYPE/ PLANAR PASSIVATION TYPE
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
| BCR20AM BCR20AM-8L |
400 V, 20 A, TRIAC, TO-220
MEDIUM POWER USE NON-INSULATED TYPE/ PLANAR PASSIVATION TYPE
MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| S6992 |
Thyristor Silicon Planar Type Condenser Discharge Control Applications
TOSHIBA Thyristor Silicon Planar Type
|
TOSHIBA[Toshiba Semiconductor]
|
| NP0H3A3 |
Silicon PNP epitaxial planar type (Tr1), Silicon NPN epitaxial planar type (Tr2)
|
PANASONIC[Panasonic Semiconductor]
|
| MT6C03AE |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
| SM6J45A SM6G45 SM6G45A SM6J45 |
BI .DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE AC POWER CONTROL APPLICATIONS
TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
TO-220 .75H .57W .5D W/MTG TAB
Heat Sink; Package/Case:TO-220; Body Material:Aluminum; Thermal Resistance:27.3 C/W; Color:Black; Leaded Process Compatible:No; Mounting Type:Through Hole; Peak Reflow Compatible (260 C):No; Size/Dimensions:0.750H x 0.500W"
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
Toshiba, Corp.
|
| SUR522H |
Epitaxial Planar Type NPN Silicon Transistor 外延型NPN硅平面晶体管
Digital TR > Complex Type
|
Toshiba, Corp.
List of Unclassifed Manufacturers
ETC[ETC]
AUK Corp
|
